? semiconductor components industries, llc, 2013 november, 2013 ? rev. 1 1 publication order number: 2n3637/d 2N3634, 2N3634l, 2n3635, 2n3635l, 2n3636, 2n3636l, 2n3637, 2n3637l low power transistors pnp silicon features ? mil?prf?19500/357 qualified ? available as jan, jantx, jantxv and janhc maximum ratings (t a = 25 c unless otherwise noted) characteristic symbol 2N3634/l 2n3635/l 2n3636/l 2n3637/l unit collector ?emitter voltage v ceo ?140 ?175 vdc collector ?base voltage v cbo ?140 ?175 vdc emitter ?base voltage v ebo ?5.0 vdc collector current ? continuous i c 1.0 adc total device dissipation @ t a = 25 c p t 1.0 w total device dissipation @ t c = 25 c p t 5.0 w operating and storage junc- tion temperature range t j , t stg ?65 to +200 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r ja 175 c/w thermal resistance, junction to case r jc 35 c/w stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ordering information level device package shipping jan jantx jantxv janhc 2N3634 to?39 bulk 2n3635 2n3636 2n3637 2N3634l to?5 bulk 2n3635l 2n3636l 2n3637l http://onsemi.com collector 3 2 base 1 emitter to?5 case 205aa style 1 2N3634l 2n3635l 2n3636l 2n3637l to?39 case 205ab style 1 2N3634 2n3635 2n3636 2n3637
2N3634, 2N3634l, 2n3635, 2n3635l, 2n3636, 2n3636l, 2n3637, 2n3637l http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ?emitter breakdown voltage (i c = ?10 ma) 2N3634, 2n3635 2n3636, 2n3637 v (br)ceo ?140 ?175 ? ? v emitter?base cutoff current (v eb = ?3.0 v) (v eb = ?5.0 v) i ebo ? ? ?50 ?10 na a collector?emitter cutoff current (v ce = ?100 v) i ceo ? ?10 a collector?base cutoff current (v cb = ?100 v) (v cb = ?140 v) 2N3634, 2n3635 (v cb = ?175 v) 2n3636, 2n3637 i cbo ? ? ? ?100 ?10 ?10 na a a on characteristics (note 1) dc current gain 2N3634, 2n3636 (i c = ?0.1 ma, v ce = ?10 v) (i c = ?1.0 ma, v ce = ?10 v) (i c = ?10 ma, v ce = ?10 v) (i c = ?50 ma, v ce = ?10 v) (i c = ?150 ma, v ce = ?10 v) h fe 25 45 50 50 30 ? ? ? 150 ? ? dc current gain 2n3635, 2n3637 (i c = ?0.1 ma, v ce = ?10 v) (i c = ?1.0 ma, v ce = ?10 v) (i c = ?10 ma, v ce = ?10 v) (i c = ?50 ma, v ce = ?10 v) (i c = ?150 ma, v ce = ?10 v) h fe 55 90 100 100 60 ? ? ? 300 ? ? collector ?emitter saturation voltage (i c = ?10 ma, i b = ?1.0 ma) (i c = ?50 ma, i b = ?5.0 ma) v ce(sat) ? ? ?0.3 ?0.6 v base ?emitter saturation voltage (i c = ?10 ma, i b = ?1.0 ma) (i c = ?50 ma, i b = ?5.0 ma) v be(sat) ? ?0.65 ?0.8 ?0.9 v small?signal characteristics magnitude of small?signal current gain (i c = ?30 ma, v ce = ?30 v, f = 100 mhz) 2N3634, 2n3636 2n3635, 2n3637 |h fe | 1.5 2.0 8.0 8.5 ? small?signal current gain (i c = ?10 ma, v ce = ?10 v, f = 1 khz) 2N3634, 2n3636 2n3635, 2n3637 h fe 40 80 160 320 ? output capacitance (v cb = ?20 v, i e = 0 a, 100 khz f 1.0 mhz) c obo ? 10 pf input capacitance (v eb = ?1.0 v, i c = 0 a, 100 khz f 1.0 mhz) c ibo ? 75 pf noise figure (v ce = ?10 v, i c = ?0.5 ma, r g = 1 k , f = 100 hz) (v ce = ?10 v, i c = ?0.5 ma, r g = 1 k , f = 1.0 khz) (v ce = ?10 v, i c = ?0.5 ma, r g = 1 k , f = 10 khz) nf ? ? ? 5.0 3.0 3.0 db switching characteristics delay time (reference figure 11 in mil?prf?19500/357) t d ? 100 ns rise time (reference figure 11 in mil?prf?19500/357) t r ? 100 ns storage time (reference figure 11 in mil?prf?19500/357) t s ? 500 ns fall time (reference figure 11 in mil?prf?19500/357) t f ? 150 ns turn?off time (reference figure 11 in mil?prf?19500/357) t off ? 600 ns 1. pulse test: pulse width = 300 s, duty cycle 2.0%.
2N3634, 2N3634l, 2n3635, 2n3635l, 2n3636, 2n3636l, 2n3637, 2n3637l http://onsemi.com 3 i c , collector current (ma) h fe , dc current gain 400 0.1 1 10 100 figure 1. dc current gain 350 300 250 200 150 100 50 0 150 c ?55 c 25 c v ce = 10 v i c , collector current (ma) v besat , base?emitter saturation voltage (v) 1.2 0.1 1 10 100 figure 2. base?emitter saturation voltage ?55 c 25 c 150 c i c /i b = 10 1.0 0.8 0.6 0.4 0.2 0 i c , collector current (ma) v cesat , collector?emitter saturation voltage (v) 0.6 0.1 1 10 100 figure 3. collector?emitter saturation voltage ?55 c 25 c 150 c i c , collector current (ma) v beon , base?emitter voltage (v) 1.1 0.1 1 10 100 figure 4. base?emitter voltage v ce = 1 v i c /i b = 10 ?55 c 25 c 150 c 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 i b , base current (ma) v cesat , collector?emitter saturation voltage (v) 1.0 0.01 0.10 1 10 figure 5. collector saturation region i c = 10 ma 100 ma 300 ma v be , base?emitter voltage (v) c ibo , input capacitance (pf) 70 ?5 ?4 ?3 0 figure 6. input capacitance t j = 25 c f test = 10 khz ?2 0.1 0.01 ?1 0.5 0.4 0.3 0.2 0.1 0 60 50 40 30 20 10 0
2N3634, 2N3634l, 2n3635, 2n3635l, 2n3636, 2n3636l, 2n3637, 2n3637l http://onsemi.com 4 v bc , base?collector voltage (v) c obo , input capacitance (pf) ?20 ?18 ?10 0 figure 7. output capacitance 20 15 10 5 0 ?16 ?14 ?12 ?8 ?6 ?4 ?2 t j = 25 c f test = 10 khz i c , collector current (ma) f , current gain bandwidth (mhz) 1 10 100 figure 8. current gain bandwidth product 300 250 200 150 100 50 0 t j = 25 c v ce = ?5 v
2N3634, 2N3634l, 2n3635, 2n3635l, 2n3636, 2n3636l, 2n3637, 2n3637l http://onsemi.com 5 package dimensions to?5 3?lead case 205aa issue b style 1: pin 1. emitter 2. base 3. collector seating plane r f b c k l p d 3x m h j s b 0.007 (0.18mm) c m a n dim min max min max inches millimeters a 0.350 0.370 8.89 9.40 b 0.315 0.335 8.00 8.51 c 0.240 0.260 6.10 6.60 d 0.016 0.021 0.41 0.53 e 0.009 0.125 0.23 3.18 f 0.016 0.019 0.41 0.48 n 0.200 bsc 5.08 bsc h 0.028 0.034 0.71 0.86 j 0.029 0.040 0.73 1.02 k 1.500 1.750 38.10 44.45 l 0.250 --- 6.35 --- m 45 bsc 45 bsc r 0.054 bsc 1.37 bsc p --- 0.050 --- 1.27 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. dimension j measured from diameter a to edge. 4. lead true position to be determined at the guage plane defined by dimension r. 5. dimension f applies between dimension p and l. 6. dimension d applies between dimension l and k. 7. body contour optional within zone defined by dimen- sions a, b, and t. 8. dimension b shall not vary more than 0.010 in zone p. t --- 0.030 --- 0.76 u 0.100 --- 2.54 --- a b a detail x u note 5 notes 4 & 6 c u e 2 3 1 detail x note 7 t lead identification detail
2N3634, 2N3634l, 2n3635, 2n3635l, 2n3636, 2n3636l, 2n3637, 2n3637l http://onsemi.com 6 package dimensions to?39 3?lead case 205ab issue a style 1: pin 1. emitter 2. base 3. collector seating plane r f b c k l p d 3x m h j s b 0.007 (0.18mm) c m a n dim min max min max inches millimeters a 0.350 0.370 8.89 9.40 b 0.315 0.335 8.00 8.51 c 0.240 0.260 6.10 6.60 d 0.016 0.019 0.41 0.48 e 0.009 0.125 0.23 3.18 f 0.016 0.019 0.41 0.48 n 0.200 bsc 5.08 bsc h 0.028 0.034 0.71 0.86 j 0.029 0.040 0.73 1.02 k 0.500 0.580 12.70 14.73 l 0.250 --- 6.35 --- m 45 bsc 45 bsc r 0.054 bsc 1.37 bsc p --- 0.050 --- 1.27 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. dimension j measured from diameter a to edge. 4. lead true position to be determined at the guage plane defined by dimension r. 5. dimension f applies between dimension p and l. 6. dimension d applies between dimension l and k. 7. body contour optional within zone defined by dimen- sions a, b, and t. 8. dimension b shall not vary more than 0.010 in zone p. t --- 0.030 --- 0.76 u 0.100 --- 2.54 --- a b a detail x u note 5 notes 4 & 6 c u e 2 3 1 detail x note 7 t lead identification detail on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 2n3637/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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